![]() Here, we show local control of the current distribution. The investigation is useful in design of gold-doped and non-gold-doped epitaxial transistor where the n-n interface is being brought increasingly close to the collector junction to reduce VCF(SAT, and the collector series resistance. In Josephson junctions with semiconducting weak links, the carrier density, and therefore the overall current distribution, can be modified electrostatically via metallic gates. The above conclusions have been verified experimentally for a few typical modern epitaxial planar transistors. The group is currently active in the fields of optical chip-based evanescent wave spectroscopy (Mid-IR and Raman Spectroscopies) for biomedical diagnostics applications and environmental sensing, Disposable chips (silicon and plastic) based point of care devices for rapid and early medical diagnostics (neonatal/respiratory and cancer), Transparent integrated optical chips for on-chip nanoscopy, Integrated Mid-IR spectrometers (on chip), Electro-optic devices based on amorphous materials with induced Pockels effect, Novel optical micro-resonators, waveguide lasers and amplifiers, and micro-structured dielectric films and materials. The critical current response to an applied out-of-plane magnetic field in a Josephson junction provides insight into the uniformity of its current distribution. We demonstrate that not only can the junction width be electrostatically defined but also the current profile can be locally adjusted to form superconducting quantum interference devices. ![]() The Integrated Photonic Devices Group, led by Professor Senthil Murugan Ganapathy, was established in early 1990 by Professor James Wilkinson to meet the demand for optical device functions of increasing complexity and parallelism. Planar photonic devices are exploited in applications as diverse as telecommunications, tuneable and short-pulse miniature laser light sources, diagnostics in medicine, the environment and food processing, and early-warning sensors for biological agents. We exploit surface science, waveguide engineering, laser physics and microstructure technology to realise robust mass-producible integrated optical circuits, to further the monolithic integration of diverse devices, and to develop novel materials processing for optoelectronic devices. NPN Silicon Epitaxial Planar Transistor D882 C135 Rev.B 2 ELECTRICAL CHARACTERISTICS Ta25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C100A,I E0 40. Here, we show local control of the current distribution in an epitaxial Al-InAs Josephson junction equipped with five minigates.
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